High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

Cha, S.N., Jang, J.E., Choi, Y., Amaratunga, G.A.J., Ho, G.W., Welland, M.E., Hasko, D.G., (…), Kim, J.M.. “High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes” Applied Physics Letters, 89 (26), art. no. 263102 (2006). [PDF]